PART |
Description |
Maker |
ARF447 ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz N-CHANNEL ENHANCEMENT MODE
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ADPOW[Advanced Power Technology]
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BSP75G BSP75G2 |
Ultra Low Capacitance Transient Voltage Suppressor Diodes 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET?/a> MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET⑩ MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET??MOSFET IntelliFET 60V self protected MOSFET
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List of Unclassifed Manufacturers ETC N.A. Zetex Semiconductors
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STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
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STMicroelectronics ST Microelectronics
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STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的) N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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TN2410L VN2406E |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V,夹断电.18AN沟道增强型MOSFET晶体 N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
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Vishay Intertechnology,Inc.
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VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω,N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS(击穿电40伏,10Ω沟道增强型垂直的DMOS结构场效应管 N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??) N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
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Elan Microelectronics, Corp. ELAN Microelctronics Corp .
|
LS4D18-270-RN LS4D18-3R3-RN LS4D18-560-RN LS4D18-2 |
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L PDIP 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD 10.0mV Dual N-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR, SMD 10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel Programmable Matched Pair MOSFET Array, Enhancement Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L MSOP Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L SOIC
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http:// ICE Components, Inc. ICE COMPONENTS INC
|
2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor List of Unclassifed Manufacturers
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MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system P-CHANNEL ENHANCEMENT?ODE P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
APM9968C APM9968COC-TR |
20 V, N-channel enhancement mode MOSFET N-Channel Enhancement Mode MOSFET N沟道增强型MOS From old datasheet system
|
Anpec Electronics, Corp. ANPEC[Anpec Electronics Coropration] ANPEC Electronics Corporation
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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